AO4707 symbol units v ds v v gs v t a =25c t a =70c i dm v ka v t a =25c t a =70c i fm t a =25c t a =70c t j , t stg c symbol units r jl r jl 40 c/w maximum junction-to-ambient a steady-state 67 75 maximum junction-to-lead c steady-state 25 30 maximum junction-to-ambient a t 10s r ja 36 c/w 54 21 thermal characteristics schottky maximum junction-to-ambient a t 10s r ja 24 75 maximum junction-to-lead c junction and storage temperature range -55 to 150 parameter: thermal characteristics mosfet typ max -55 to 150 p d 33 w 22 5 a 3.5 30 a -6.6 pulsed drain current b -40 gate-source voltage 20 continuous drain current a i d -8 parameter mosfet schottky drain-source voltage -30 absolute maximum ratings t a =25c unless otherwise noted power dissipation 30 schottky reverse voltage continuous forward current a i f pulsed forward current b steady-state 30 40 maximum junction-to-ambient a steady-state features v ds (v) = -30v i d = -8a (v gs = - 10v) r ds(on) < 33m ? (v gs = - 10v) r ds(on) < 56m ? (v gs = - 4.5v) schottky v ds (v) = 30v, i f = 3a, v f <0.52v@3a the AO4707 uses advanced trench technology to provide excellent r ds(on) and low gate charge. a schottky diode is provided to facilitate the implementation of non-synchronous dc-dc converters. standard product ao8820 is pb-free (meets rohs & sony 259 specifications). ao8820l is a green product ordering option. ao8820 and a o8820l are electrically identical. g d s a k g s s a d/k d/k d/k d/k 1 2 3 4 8 7 6 5 soic-8 dual p-channel enhancement mode field effect transistor with schottky diode general description www.freescale.net.cn 1 / 5
AO4707 symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 100 na v gs(th) -1.2 -2 -2.4 v i d(on) 40 a 24.5 33 t j =125c 33 41 56 m ? g fs 14.5 s v sd -0.76 -1 v i s -4.2 a c iss 920 pf c oss 190 pf c rss 122 pf r g 3.6 ? q g (10v) 18.4 nc q g (4.5v) 9.3 nc q gs 2.7 nc q gd 4.9 nc t d(on) 7.1 ns t r 3.4 ns t d(off) 18.9 ns t f 8.4 ns t rr 21.5 ns q rr 12.5 nc schottky parameters v f 0.48 0.52 v 0.07 0.15 4.2 20 15 60 c t 120 pf this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =0v, v ds =-15v, f=1mhz gate drain charge total gate charge (10v) v gs =-10v, v ds =-15v, i d =-8a turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =1.8 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time switching parameters total gate charge (4.5v) gate source charge m ? v gs =-4.5v, i d =-5a i s =-1a,v gs =0v v ds =-5v, i d =-8a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs i d =-250 a v ds =-24v, v gs =0v v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =-8a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-8a reverse transfer capacitance i f =-8a, di/dt=100a/ s forward voltage drop i f =3.0a i rm maximum reverse leakage current v r =24v ma v r =24v, t j =125c v r =24v, t j =150c junction capacitance v r =15v a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev4: august 2005 www.freescale.net.cn 2 / 5
AO4707 p-channel: typical electrical and thermal characteristics 0 5 10 15 20 25 30 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-3v -6v -3.5v -4v -10v 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -v gs (volts) figure 2: transfer characteristics -i d (a) 10 20 30 40 50 60 0 5 10 15 20 25 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.80 1.00 1.20 1.40 1.60 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v v gs =-4.5v 0 10 20 30 40 50 60 70 80 345678910 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-7.5a 25c 125c i d =-7.5a -4.5v - 5v www.freescale.net.cn 3 / 5
AO4707 p-channel: typical electrical and thermal characteristics 0 2 4 6 8 10 0 4 8 12 16 20 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 1 0 m s 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c, t a =25c v ds =-15v i d =-8a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =40c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s www.freescale.net.cn 4 / 5
AO4707 typical electrical and thermal characteristics: schottk y 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 v f (volts) figure 12: schottky forward characteristics i f (amps) 0 100 200 300 400 500 600 0 5 10 15 20 25 30 v ka (volts) figure 13: schottky capacitance characteristics capacitance (pf) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 0 25 50 75 100 125 150 175 temperature (c) figure 15: schottky leakage current vs. junction temperature leakage current (a) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 25 50 75 100 125 150 175 temperature (c) v f (volts) figure 14: schottky forward drop vs. junction temperature single pulse d=t on / t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse f = 1mhz i f =3a 25c i f =5a v r =24v 125c t on t p d www.freescale.net.cn 5 / 5
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